Technological breakthrough


★ Ultra low metal impurities: Na/K content<1ppm, meeting G5 electronic grade standards


★ Low temperature polymerization characteristics: reaction can be initiated at 80 ℃, compatible with flexible substrate technology


★ Dielectric strengthening: After curing, the dielectric constant is less than 2.8 (1MHz), which is better than traditional SiO2






Solution






Chip packaging:






As a precursor of Low-k dielectric layer, reducing RC delay






Enhance the step coverage of 3D packaged TSV structures






Electronic adhesive:






Modified epoxy resin to achieve a thermal conductivity of 1.5W/mK






Curing shrinkage rate<0.3%, reducing packaging stress






Performance Comparison






Characteristic IOTA N209 competitor mean


Thermal decomposition temperature 420 ℃ 380 ℃


Moisture Sensitivity Level (MSL) 1 2-3